In-situ method of cleaning vaporizer during dielectric layer deposition process
US7824501B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2007 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Dec 7, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45544
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.