Method for manufacturing probe structure
US7824561B2 · kind B2 · utility
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3References
14Claims
0Family size
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Key dates
| Filing date | Jul 25, 2007 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Jan 30, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/06727
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for manufacturing a probe structure is disclosed. In accordance with the method, two semiconductor substrates having different crystal directions are bonded and selectively etched utilizing an etch selectivity due to the different crystal directions to form a probe tip region and a probe beam region. A cantilever structure for a probe card is formed by filling the probe tip region and the probe beam region with a conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.