Patent · US Active

Method of forming a semiconductor device and semiconductor device thereof

US7824973B2 · kind B2 · utility

0Cited by

1References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Karl Hofmann · Munich, DE
Stefan Decker · Munich, DE

Key dates

Filing date	Oct 2, 2008
Grant date	Nov 2, 2010
Priority date	—
Expiry date	Jan 30, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/83
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

According to one embodiment of the present invention, a method of forming a semiconductor device is provided, the method including: forming a substrate; forming a first gate on the substrate; forming a mask layer on the substrate, the mask layer including a first window covering an area within which the first gate is formed so that the first gate divides the substrate exposed by the first window into a first region and a second region; and doping the exposed substrate using rays inclined with respect to the substrate top surface, where the position of the first gate with respect to a border of the first window is chosen such that the inclined doping rays impinge more on the first region than on the second region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.