SiC semiconductor device and method for manufacturing the same
US7824995B2 · kind B2 · utility
15Cited by
5References
49Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 26, 2008 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Aug 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SiC semiconductor device includes: a SiC substrate having a main surface; a channel region on the substrate; first and second impurity regions on upstream and downstream sides of the channel region, respectively; a gate on the channel region through a gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 2.6×1020 cm−3. The interface provides a channel surface perpendicular to a (0001)-orientation plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.