Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfaces
US7825017B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 18, 2009 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Mar 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.