Method for depositing flowable material using alkoxysilane or aminosilane precursor
US7825040B1 · kind B1 · utility
514Cited by
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14Claims
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Key dates
| Filing date | Jun 22, 2009 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Jun 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at −50° C. to 100° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.