Patent · US Active

Semiconductor chip structure, method of manufacturing the semiconductor chip structure, semiconductor chip package, and method of manufacturing the semiconductor chip package

US7825495B2 · kind B2 · utility

2Cited by
2References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 17, 2008
Grant dateNov 2, 2010
Priority date
Expiry dateJun 18, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18301
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor chip structure may include a semiconductor chip, a first insulation layer and a redistribution layer. The first insulation layer may be formed on the semiconductor chip. The first insulation layer may have at least one first groove formed at an upper surface portion of the first insulation layer. Further, the at least one first groove may have an upper width and a lower width greater than the upper width. The redistribution layer may be partially formed on the first insulation layer. The redistribution layer may have at least one first protrusion formed on a lower surface portion of the redistribution layer. The first protrusion may have an upper width and a lower width less than the upper width. The first protrusion may be inserted into the at least one first groove.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.