Method for adjusting lithographic mask flatness using thermally induced pellicle stress
US7826038B2 · kind B2 · utility
2Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2008 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Nov 5, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for adjusting the flatness of a lithographic mask includes determining an initial mask flatness of the mask, determining an applied stress for bringing the mask to a desired mask flatness, and determining a mounting temperature of a pellicle frame to be mounted to the mask, the mounting temperature corresponding to the applied stress. The actual temperature of the pellicle frame is adjusted to the determined mounting temperature, and the pellicle frame is mounted to the mask at the mounting temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.