Patent · US Active

Fuse monitoring circuit for semiconductor memory device

US7826296B2 · kind B2 · utility

4Cited by
1References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 2008
Grant dateNov 2, 2010
Priority date
Expiry dateJan 5, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C29/785
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A fuse monitoring circuit for a semiconductor device includes a repair fuse unit including a number of fuses to which a repair address is programmed, and configured to output fuse state signals corresponding to the connection states of the respective fuses in response to a fuse initialization signal. A serial fuse monitoring unit is configured to output a fuse state monitoring signal corresponding to each fuse state signal selected by an applied address in response to a serial monitoring test mode signal. Also, a parallel fuse monitoring unit is configured to output a repair monitoring signal by comparing an applied address and the repair address in response to a parallel monitoring test mode signal. An output unit is configured to output the fuse state monitoring signal and the repair monitoring signal to an output pad in response to an output control signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.