Patent · US Active

Data storage nanostructures

US7826336B2 · kind B2 · utility

5Cited by
30References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 23, 2006
Grant dateNov 2, 2010
Priority date
Expiry dateDec 10, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/943
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The present invention relates to a device for data storage. In particular the invention relates to a single electron memory device utilizing multiple tunnel junctions, and arrays or matrixes of such devices. The data storage device according to the invention comprises at least one nanowhisker adapted to store a charge. Each of the nanowhiskers comprises a sequence of axial segments of materials of different band gaps, arranged to provide a sequence of conductive islands separated by tunnel barriers and a storage island arranged at one end of the conductive island/tunnel barrier sequence, whereby to provide a data storage capability. The number of conductive islands should preferably be between five and ten.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.