Silicon wafer and process for the heat treatment of a silicon wafer

US7828893B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Timo Mueller · Burghausen, DE
• Wilfried von Ammon · Burghausen, DE
• Erich Daub · Emmerting, DE
• Peter Krottenthaler · Burghausen, DE
• Klaus Messmann · Burghausen, DE
• Friedrich Passek · Adlkofen, DE
• Reinhold Wahlich · Burghausen, DE
• Arnold Kuehhorn · Berlin, DE
• Johannes Studener · Cottbus - Chóśebuz, DE

Key dates

• Filing date: Mar 22, 2006
• Grant date: Nov 9, 2010
• Expiry date: Aug 23, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1068
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A silicon wafer having no epitaxially deposited layer or layer produced by joining to the silicon wafer, with a nitrogen concentration of 1·1013-8·1014 atoms/cm3, an oxygen concentration of 5.2·1017-7.5·1017 atoms/cm3, a central thickness BMD density of 3·108-2·1010 cm−3, a cumulative length of linear slippages ≦3 cm and a cumulative area of areal slippage regions ≦7 cm2, the front surface having <45 nitrogen-induced defects of >0.13 μm LSE in the DNN channel, a layer at least 5 μm thick, in which ≦1·104 COPs/cm3 with a size of ≧0.09 μm occur, and a BMD-free layer ≧5 μm thick. Such wafers may be produced by heat treating the silicon wafer, resting on a substrate holder, a specific substrate holder used depending on the wafer doping. For each holder, maximum heating rates are selected to avoid formation of slippages.