Patent · US Expired

Method and device to form high quality oxide layers of different thickness in one processing step

US7829411B2 · kind B2 · utility

1Cited by

11References

12Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Josine Loo · Leuven, BE
Youri Victorovitch Ponomarev · Leuven, BE
Robertus Theodorus Fransiscus Schaijk · Leuven, BE

Key dates

Filing date	Jan 20, 2003
Grant date	Nov 9, 2010
Priority date	—
Expiry date	Sep 29, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02255
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to a method for forming high quality oxide layers of different thickness over a first and a second semiconductor region in one processing step. The method comprises the steps of: A corresponding device is also provided.Using a low-temperature oxidation in combination with high doping levels results in an unexpected oxidation rate increase.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.