Method of fabricating semiconductor device for preventing a pillar pattern from bending and from exposing externally
US7829415B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2008 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Jan 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
Abstract
A method of fabricating a semiconductor device includes forming a plurality of pillar patterns on a substrate, filling a gap between the pillar patterns with a first conductive layer, forming a first hard mask layer pattern over the pillar patterns adjacent in one direction, etching the first conductive layer using the first hard mask layer pattern as an etch barrier, forming a second hard mask pattern over the pillar pattern adjacent in the other direction that crosses the one direction, and forming a gate electrode surrounding the pillar patterns by etching the first conductive layer etched using the second hard mask layer pattern as an etch barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.