Patent · US Active

Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element

US7829450B2 · kind B2 · utility

1Cited by

9References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Hammer · Neu-Ulm, DE
Guenther Ruhl · Regensburg, DE
Andreas Strasser · Graz, AT
Michael Melzl · Neutraubling, DE
Reinhard Goellner · Regensburg, DE
Doerthe Groteloh · Regensburg, DE

Key dates

Filing date	Nov 7, 2007
Grant date	Nov 9, 2010
Priority date	—
Expiry date	Jan 4, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/958
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method of processing a contact pad, a passivation layer stack including at least one passivation layer is formed on at least an upper surface of a contact pad region. A first portion of the passivation layer stack is removed from above the contact pad region, wherein a second portion of the passivation layer remains on the contact pad region and covers the contact pad region. An adhesion layer is formed on the passivation layer stack. The adhesion layer is patterned, wherein the adhesion layer is removed from above the contact pad region. Furthermore, the second portion of the passivation layer stack is removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.