Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride

US7829460B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Christof Streck · Coswig, DE
• Volker Kahlert · Dresden, DE

Key dates

• Filing date: Nov 30, 2007
• Grant date: Nov 9, 2010
• Expiry date: Feb 24, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.