Patent · US Active

Device having etched feature with shrinkage carryover

US7829852B2 · kind B2 · utility

1Cited by
13References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 28, 2007
Grant dateNov 9, 2010
Priority date
Expiry dateJun 9, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N23/225
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

In an embodiment of the present invention, a device includes a first etched feature located in a critical dimension scanning electron microscope (CD-SEM) characterization location, the first etched feature having an upper section, a middle section, and a lower section wherein the middle section is severely shrunk relative to a corresponding middle section of a second etched feature having similar dimensions and composition that is not located in a CD-SEM characterization location. In another embodiment of the present invention, the middle section of the first etched feature has a shrinkage carryover exceeding a threshold. In still another embodiment of the present invention, the middle section of the first etched feature exhibits a line edge roughness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.