Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7829875B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 31, 2006 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Feb 10, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a layer of a resistivity-switching material arranged electrically in series, wherein the resistivity-switching material is a metal oxide or nitride compound, the compound including exactly one metal. The dielectric rupture antifuse is ruptured in a preconditioning step, forming a rupture region through the antifuse. The rupture region provides a narrow conductive path, serving to limit current to the resistivity-switching material, and improving control when the resistivity-switching layer is switched between higher- and lower-resistivity states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.