Quantum dot semiconductor device
US7829880B2 · kind B2 · utility
4Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Mar 13, 2008 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Oct 25, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.