Nitride semiconductor light emitting device
US7829882B2 · kind B2 · utility
2Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2006 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Dec 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.