Vertical carbon nanotube field effect transistors and arrays

US7829883B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Toshiharu Furukawa · South Burlington, US
• Mark C. Hakey · Saint Albans, US
• Steven J. Holmes · Colchester, US
• David V. Horak · South Burlington, US
• Charles W. Koburger, III · Delmar, US
• Peter H. Mitchell · Jericho, US
• Larry Nesbit · Farmington, US

Key dates

• Filing date: Feb 12, 2004
• Grant date: Nov 9, 2010
• Expiry date: Feb 12, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/734
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Carbon nanotube field effect transistors, arrays of carbon nanotube field effect transistors, device structures, and arrays of device structures. A stacked device structure includes a gate electrode layer and catalyst pads each coupled electrically with a source/drain contact. The gate electrode layer is divided into multiple gate electrodes and at least one semiconducting carbon nanotube is synthesized by a chemical vapor deposition process on each of the catalyst pads. The gate electrode has a sidewall covered by a gate dielectric and at least one semiconducting carbon nanotube adjacent to the sidewall of the gate electrode. Source/drain contacts are electrically coupled with opposite ends of the semiconducting carbon nanotube to complete the device structure. Multiple device structures may be configured either as a memory circuit or as a logic circuit.