Patent · US Active

Polyoxometallates in memory devices

US7829927B2 · kind B2 · utility

7Cited by

4References

27Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Gerard Bidan · Grenoble, FR
Eric Jalaguier · Meylan, FR

Key dates

Filing date	Aug 2, 2006
Grant date	Nov 9, 2010
Priority date	—
Expiry date	Nov 28, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/53
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention relates to a DRAM memory device with a capacity associated with a field effect transistor, in which all or some of the molecules capable of storing the loads comprising a polyoxometallate are incorporated into the capacity, or a flash-type memory using at least one field effect transistor, in which the molecules capable of storing the loads comprising a polyoxometallate are incorporated into the floating grid of the transistor. The invention also relates to a method for producing on such device and to an electronic appliance comprising one such memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.