Inventor · Meylan, FR

Eric Jalaguier

17Patents
6h-index
26Co-inventors
66Inventor score

Filing activity: Oct 6, 1999 → Aug 18, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6362077B1 Structure comprising a thin layer of material made up of conductive zones and insulating zones and a method of manufacturing such a structure Electricity 32 Expired
US6974759B2 Method for making a stacked comprising a thin film adhering to a target substrate Electricity 30 Expired
US7208392B1 Creation of an electrically conducting bonding between two semi-conductor elements Electricity 22 Expired
US7008859B2 Wafer and method of producing a substrate by transfer of a layer that includes foreign species Electricity 16 Expired
US7829927B2 Polyoxometallates in memory devices Physics 7 Active
US7031578B2 Method and device for passive alignment of optical waveguides and optoelectronic components and optical system using said device Physics 6 Expired
US8940623B2 Process for obtaining an array of nanodots Electricity 4 Active
US8481409B2 Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate Electricity 2 Active
US8679946B2 Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate Electricity 2 Active
US8865548B2 Method of making a non-volatile double gate memory cell Electricity 2 Active
US7906362B2 Assembling two substrates by molecular adhesion Emerging Cross-Sectional Technologies 1 Expired
US7645684B2 Wafer and method of producing a substrate by transfer of a layer that includes foreign species Electricity 1 Active
US10002769B2 Method for functionalizing a solid substrate, other than a substrate made of gold, via specific chemical compounds Performing Operations; Transporting 0 Active
US7535115B2 Wafer and method of producing a substrate by transfer of a layer that includes foreign species Electricity 0 Active
US10297641B2 Memory device Electricity 0 Active
US11711927B2 Filamentary type non-volatile memory device Electricity 0 Active
US12382845B2 Method for manufacturing resistive memory cells Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.