Edge termination structure for semiconductor components

US7829972B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Franz Hirler · Isen, DE
• Holger Kapels · Holzkirchen, DE

Key dates

• Filing date: Mar 8, 2007
• Grant date: Nov 9, 2010
• Expiry date: May 6, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A semiconductor component has a drift path (4) in a semiconductor body (5) of a semiconductor chip (6). The semiconductor component has an edge area (7) and a cell area (8), which is surrounded by the edge area (7). A trench structure (9), which surrounds the semiconductor component (6) in the edge area (7), is arranged in the edge area (7) of the semiconductor component (6). At least the trench walls (10) are covered by an insulation material (11). The trench structure (9) which surrounds the semiconductor component (6) has overlapping trench zones (12) with semiconductor material (13) arranged between them.