Electronic device, method of producing the same, and semiconductor device
US7830007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2008 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | May 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes n1 first interconnects (n is an integer larger than one) respectively formed on first electrodes and extending over a first resin protrusion, and n2 second interconnects (n2<n1) respectively formed on second electrodes and extending over a second resin protrusion. The first and second resin protrusions are formed of an identical material, have an identical width, and extend longitudinally. The first interconnects extends to intersect a longitudinal axis of the first resin protrusion, and each of the first interconnects has a first width W1 on the first resin protrusion. The second interconnects extends to intersect a longitudinal axis of the second resin protrusion, and each of the second interconnects has a second width W2 (W1<W2) on the second resin protrusion. The relationship W1×n1=W2×n2 is satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.