Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconductor layer alternatively of magnetic material

US7830640B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Bernard Dieny · Le Pont-de-Claix, FR
• Bernard Rodmacq · Saint-Égrève, FR
• Franck Ernult · Chofu, JP

Key dates

• Filing date: Nov 14, 2008
• Grant date: Nov 9, 2010
• Expiry date: Nov 14, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49044
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers.