High dielectric capacitor materials and method of their production
US7830644B2 · kind B2 · utility
0Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2007 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Nov 11, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/3281
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.