Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7830698B2 · kind B2 · utility
66Cited by
62References
25Claims
0Family size
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Key dates
| Filing date | May 27, 2008 |
| Grant date | Nov 9, 2010 |
| Priority date | — |
| Expiry date | Sep 17, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory cell includes a steering element located in series with a storage element. The storage element includes a carbon material and the memory cell includes a rewritable cell having multiple memory levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.