Patent · US Active

Compact magnetic random access memory cell with slotted bit line and method of manufacturing same

US7830704B1 · kind B1 · utility

5Cited by
0References
8Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 6, 2008
Grant dateNov 9, 2010
Priority date
Expiry dateNov 10, 2028

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/1659
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Embodiments of the invention provide compact magnetic random access memory cell, comprising a word line; a bit line comprising a slot formed therein; a magnetic storage element disposed between the word line and the bit line; an access transistor located below the bit line and aligned with the slot therein; and a conductor passing through the slot in the bit line electrically connect the magnetic storage element to the access transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.