Patent · US Active

Integrated circuit, method of reading data stored within a memory device of an integrated circuit, method of writing data into a memory device of an integrated circuit, memory module, and computer program

US7830709B2 · kind B2 · utility

2Cited by

4References

21Claims

0Family size

Assignees

Qimonda AG · DE
Altis Semiconductor, SNC · FR

Inventor

Jan Keller · Lappersdorf, DE

Key dates

Filing date	Feb 21, 2007
Grant date	Nov 9, 2010
Priority date	—
Expiry date	Feb 7, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/009
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device comprises a plurality of memory cells, each of which comprising a first electrode, a second electrode and an active material arranged between the first electrode and the second electrode, wherein the memory cells are grouped into memory cell groups, each memory cell group defining a memory cell group area and being configured such that corresponding first electrodes are individually addressable, and corresponding second electrodes are commonly addressable via a common select device provided within the memory cell group area of the memory cell group.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.