Process and apparatus for producing nitride single crystal
US7833347B2 · kind B2 · utility
3Cited by
5References
2Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 18, 2008 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Sep 30, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A nitride single crystal is produced using a growth solution containing an easily oxidizable material. A crucible for storing the growth solution, a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen, and an oxygen absorber disposed inside the pressure vessel and outside the crucible are used to grow the nitride single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.