Electron beam etching device and method
US7833427B2 · kind B2 · utility
7Cited by
87References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2006 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Mar 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.