Structure and method for fabricating cladded conductive lines in magnetic memories
US7833806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2009 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Feb 21, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a magnetoelectronic device includes forming a dielectric material (114) surrounding a magnetic bit (112), etching the dielectric material (114) to define an opening (122) over the magnetic bit (112) without exposing the magnetic bit (112), the opening (122) having a sidewall, depositing a blanket layer (132) of cladding material over the dielectric material (118), including over the sidewall, removing by a sputtering process the blanket layer (132) in the bottom of the opening (122) and the dielectric material (124) over the magnetic bit (112), and forming a conductive material (146) within the opening (122) to form a bit line (154). This process reduces errors caused by process irregularities such as edges of the bits (112) protruding and thereby causing defects in the cladding layer (132) formed thereover. A bit line or digit line so formed may optionally be tapered at the ends (182, 184) to prevent magnetic reversal of the bit line magnetic moment that otherwise may occur due to external magnetic fields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.