Forming a thin film thermoelectric cooler and structures formed thereby
US7833816B2 · kind B2 · utility
3Cited by
1References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 7, 2005 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Nov 17, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/93
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a first plurality of openings through a first surface of a substrate, forming a p-type TFTEC material within the first plurality of openings, forming a second plurality of openings substantially adjacent to the first plurality of openings through the first surface of the substrate, and then forming an n-type TFTEC material within the second plurality of openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.