Solution-based deposition process for metal chalcogenides
US7833825B2 · kind B2 · utility
1Cited by
5References
18Claims
0Family size
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Key dates
| Filing date | Jan 16, 2009 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Jan 19, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.