Manufacturing method of semiconductor device
US7833845B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2008 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Feb 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.