Titanium silicon nitride deposition

US7833906B2 · kind B2 · utility

Assignee

• ASM International N.V. · NL

Inventors

• Martin Knapp · Dieburg, DE
• Guido Probst · Kamenz - Kamjenc, DE

Key dates

• Filing date: Dec 11, 2008
• Grant date: Nov 16, 2010
• Expiry date: Dec 11, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76862
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl4, NH3 and SiH4 as precursors. Substrates are provided in a deposition chamber of the batch reactor. In each deposition cycle, a TiN layer is formed on the substrates by flowing TiCl4 into the deposition chamber simultaneously with NH3. The deposition chamber is subsequently flushed with NH3. to prepare the TiN layer for silicon incorporation. SiH4 is subsequently flowed into the deposition chamber. Silicon from the SiH4 is incorporated into the TiN layers to form TiSiN. Exposing the TiN layers to NH3 before the silicon precursor has been found to facilitate efficient silicon incorporation into the TiN layers to form TiSiN.