Method of manufacturing semiconductor device, apparatus of manufacturing semiconductor device and semiconductor device
US7833911B2 · kind B2 · utility
1Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2007 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Feb 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: etching a first film provided on a wafer in a chamber; removing at least part of reaction products deposited on a component in the chamber facing the wafer by the etching to cause a distribution state of the deposited reaction products to get closer to a uniform state; and then etching a second film provided on the wafer in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.