Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

US7834264B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Arun Majumdar · Orinda, US
• Ali Shakouri · West Lafayette, US
• Timothy D. Sands · Cranbury, US
• Peidong Yang · Somerville, US
• Samuel S. Mao · Castro Valley, US
• Richard E. Russo · Walnut Creek, US
• Henning Feick · Dresden, DE
• Eicke R. Weber · Oakland, US
• Hannes Kind · Schaffhausen, CH
• Michael Huang · Taipei, TW
• Haoquan Yan · Albany, US
• Yiying Wu · Beijing, CN
• Rong Fan · Cheshire, US

Key dates

• Filing date: Dec 22, 2006
• Grant date: Nov 16, 2010
• Expiry date: Jul 17, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/298
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).