Reflective type semiconductor light emitting device
US7834371B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2008 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Dec 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/012
Abstract
A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.