Power semiconductor switch
US7834376B2 · kind B2 · utility
15Cited by
54References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2006 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Apr 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.