Patent · US Active

Spin torque transfer magnetic tunnel junction structure

US7834410B2 · kind B2 · utility

2Cited by

5References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Yu-Jen Wang · San Jose, US
Ya-Chen Kao · Taoyuan, TW
Chun-Jung Lin · Baoshan, TW

Key dates

Filing date	Apr 13, 2009
Grant date	Nov 16, 2010
Priority date	—
Expiry date	Apr 24, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/01
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The present disclosure provides a semiconductor memory device. The device includes a bottom electrode over a semiconductor substrate; an anti-ferromagnetic layer disposed over the bottom electrode; a pinned layer disposed over the anti-ferromagnetic layer; a barrier layer disposed over the pinned layer; a first ferromagnetic layer disposed over the barrier layer; a buffer layer disposed over the first ferromagnetic layer, the buffer layer including tantalum; a second ferromagnetic layer disposed over the buffer layer; and a top electrode disposed over the second ferromagnetic layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.