Inventor · Taoyuan, TW

Ya-Chen Kao

46Patents
8h-index
52Co-inventors
78Inventor score

Filing activity: Dec 13, 2002 → Aug 9, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6649489B1 Poly etching solution to improve silicon trench for low STI profile Electricity 21 Expired
US7683447B2 MRAM device with continuous MTJ tunnel layers Physics 21 Active
US8416600B2 Reverse connection MTJ cell for STT MRAM Electricity 17 Active
US8878318B2 Structure and method for a MRAM device with an oxygen absorbing cap layer Electricity 14 Active
US9659953B2 HKMG high voltage CMOS for embedded non-volatile memory Electricity 13 Active
US9276010B2 Dual silicide formation method to embed split gate flash memory in high-k metal gate (HKMG) technology Electricity 9 Active
US8760255B2 Contactless communications using ferromagnetic material Emerging Cross-Sectional Technologies 8 Active
US7667261B2 Split-gate memory cells and fabrication methods thereof Electricity 8 Active
US8110881B2 MRAM cell structure with a blocking layer for avoiding short circuits Electricity 5 Active
US9627392B2 Method to improve floating gate uniformity for non-volatile memory devices Electricity 4 Active
US9735245B2 Recessed salicide structure to integrate a flash memory device with a high κ, metal gate logic device Electricity 3 Active
US9431413B2 STI recess method to embed NVM memory in HKMG replacement gate technology Electricity 3 Active
US9425206B2 Boundary scheme for embedded poly-SiON CMOS or NVM in HKMG CMOS technology Electricity 3 Active
US7652318B2 Split-gate memory cells and fabrication methods thereof Electricity 3 Active
US6819593B2 Architecture to suppress bit-line leakage Physics 3 Expired
US9202817B2 Semiconductor device and method for manufacturing the same Electricity 2 Active
US10276588B2 HKMG high voltage CMOS for embedded non-volatile memory Electricity 2 Active
US8450722B2 Magnetoresistive random access memory and method of making the same Electricity 2 Active
US7834410B2 Spin torque transfer magnetic tunnel junction structure Electricity 2 Active
US8570792B2 Magnetoresistive random access memory Electricity 2 Active
US8750031B2 Test structures, methods of manufacturing thereof, test methods, and MRAM arrays Electricity 1 Active
US9379316B2 Method of fabricating a magnetoresistive random access structure Electricity 1 Active
US8648401B2 Domain wall assisted spin torque transfer magnetresistive random access memory structure Electricity 1 Active
US9412721B2 Contactless communications using ferromagnetic material Emerging Cross-Sectional Technologies 1 Active
US10050050B2 Semiconductor device with metal gate memory device and metal gate logic device and method for manufacturing the same Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.