Patent · US Active

Controlling temperature in a semiconductor device

US7834648B1 · kind B1 · utility

3Cited by

46References

18Claims

0Family size

Inventors

Eric Chen-Li Sheng · San Jose, US
David H. Hoffman · Sunnyvale, US
John Laurence Niven · Livermore, US

Key dates

Filing date	Dec 8, 2008
Grant date	Nov 16, 2010
Priority date	—
Expiry date	Dec 8, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG01R31/2817
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Systems and methods for reducing temperature dissipation during burn-in testing are described. Devices under test are each subject to a body bias voltage. The body bias voltage can be used to control junction temperature (e.g., temperature measured at the device under test). The body bias voltage applied to each device under test can be adjusted device-by-device to achieve essentially the same junction temperature at each device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.