Patent · US Active

Resistive memory

US7835173B2 · kind B2 · utility

58Cited by

8References

37Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Yantao Ma · Boise, US
Jun Liu · 红钢城街道, CN

Key dates

Filing date	Oct 31, 2008
Grant date	Nov 16, 2010
Priority date	—
Expiry date	Feb 22, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/32
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The present disclosure includes resistive memory devices and systems having resistive memory cells, as well as methods for operating the resistive memory cells. One memory device embodiment includes at least one resistive memory element, a programming circuit, and a sensing circuit. For example, the programming circuit can include a switch configured to select one of N programming currents for programming the at least one resistive memory element, where each of the N programming currents has a unique combination of current direction and magnitude, with N corresponding to the number of resistance states of the at least one memory element. In one or more embodiments, the sensing circuit can be arranged for sensing of the N resistance states.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.