Phase change memory cell and method of fabricating
US7835177B2 · kind B2 · utility
4Cited by
4References
9Claims
0Family size
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Key dates
| Filing date | Jul 27, 2006 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Mar 1, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
Abstract
A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.