High accuracy adaptive programming
US7835189B2 · kind B2 · utility
2Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2007 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | May 18, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Flash memory devices have a plurality of memory cells that can be erased and programmed. Performing a voltage verification check allows a for an appropriate state-change voltage to be applied to the flash memory device. The appropriate state-change voltage is determined though accessing a look-up table. Using an appropriate state-change voltage allows a cell to operate with more overall programming cycles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.