Method for programming a nonvolatile memory
US7835192B2 · kind B2 · utility
1Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2008 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | Jan 1, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a nonvolatile memory includes applying at least a voltage to a source or a drain, so as to inject carriers of the source or drain into a substrate; applying a third voltage to a gate or the substrate, so that the carriers which are in the substrate having enough energy can surmount an oxide layer to reach a charge storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.