Semiconductor device and method of fabricating the same
US7835211B2 · kind B2 · utility
4Cited by
10References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 4, 2009 |
| Grant date | Nov 16, 2010 |
| Priority date | — |
| Expiry date | May 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided including a first fuse link having a copper-containing metal film, a second fuse link having a polysilicon film, a semiconductor substrate, and a field insulating film formed on the semiconductor substrate. The second fuse link is formed on the field insulating film. An interlayer insulating film is provided between the first fuse link and the second fuse link. The first fuse link is electrically connected to the second fuse link via a first plug formed in the interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.