Utilization of electric field with isotropic development in photolithography
US7838205B2 · kind B2 · utility
1Cited by
1References
18Claims
0Family size
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Key dates
| Filing date | Jul 7, 2006 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Feb 16, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0392
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photolithography processing methods by which a photoresist layer is deposited, a portion of the photoresist layer is exposed to electromagnetic radiation to transfer a reticle pattern thereto, and the exposed portion of the photoresist layer is treated with thermal energy while being subjected to an electric field, wherein the electric field is configured to substantially limit diffusion of the exposed photoresist layer portion to anisotropic diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.