Method of manufacturing vertical light emitting diode
US7838315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2008 |
| Grant date | Nov 23, 2010 |
| Priority date | — |
| Expiry date | Jun 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.